A Low Cost C8051F006 SoC-Based Quasi-Static C-V Meter for Characterizing Semiconductor Devices

Endah Rahmawati, Riska Ekawita, Maman Budiman, Mikrajuddin Abdullah, Khairurrijal Khairurrijal


Based on a C8051F006 SoC (system on-a-chip), a simple and low cost quasi-static capacitance-voltage (C-V) meter was designed and developed to obtain C-V characteristics of semiconductor devices. The developed C-V meter consists of a capacitance meter, a programmable voltage source, a C8051F006 SoC-based slave controller, and a personal computer (PC) as a master controller. The communication between the master and slave controllers is facilitated by the RS 232 serial communication. The accuracy of the C-V meter was guaranteed by the calibration functions, which are employed by the program in the PC and obtained through the calibration processes of analog to digital converter (ADC), digital to analog converters (DACs) of the C8051F006 SoC, and the programmable voltage source. Examining 33-pF and 1000-pF capacitors as well three different p-n junction diodes, it was found that the capacitances of common capacitors are in the range of specified values and typical C-V curves of p-n junction diodes are achieved.

Full Text:



MS Raven, D Raven.New Approaches to the Direct Measurements of Capacitance.Electrocomponent Sci. Technol. 1977;4: 37-42.

N Fidler, JM Fernandez. Phase Tracking: An Improved Phase Detection Technique for Cell Membrane Capacitance Measurements.Biophys J. 1989; 56: 1153-1162.

J Tapson, JR Greene. Improved Capacitance Measurement by Means of Resonance Locking. Meas. Sci. Technol. 1994; 5: 20–26.

P Holmberg. Automatic Balancing of Linear A.C. Bridge Circuits for Capacitive Sensor Elements.IEEE Trans. Instrum. Meas. 1995; 44: 803–805.

MA Atmanand, VJ Kumar, VGKMurti. A Novel Method of Measurement of L and C.IEEE Trans. Instrum. Meas. 1995; 44: 898–903.

DK Schroeder. Semiconductor Material and Device Characterization. 3rd Ed., New Jersey: John Wiley & Sons. 2006.

F Recart, A Cuevas. Application of Junction Capacitance Measurements to the Characterization of Solar Cells.IEEE Trans. Electron Dev. 2006; 53: 442-448.

MA Kuhn.A Quasi-static Technique for MOS C–V and Surface State Measurements.Solid State Electron.1970; 13: 873–885.

TJ Mego. Improved Feedback Charge Method for Quasistatic CV Measurements in Semiconductors. Rev. Sci. Instr.1986; 57: 2798–2805.

CL Lee, TF Lei, JHHo, WT Wang. A Real-Time C-V Measurement Circuit for MOS Capacitors Under Current Stressing.IEEE Trans. Instrum. Meas. 1991; 40: 775-777.

Silicon Laboratories. Mixed Signal 32 KB ISP Flash MCU Family C8051F000/1/2/5/6/7 Datasheet, 2003.

A Suhendi. A C8051F350 SoC-based C-V Meter for Characterization of Diodes. Master Thesis, Department of Physics, InstitutTeknologi Bandung, Bandung. 2008. (in Indonesian)

Fairchild Semiconductors. 1N4001-1N4007 General Purpose Rectifiers Datasheets. 2003.

Sze, S. M. Physics of Semiconductor Devices. 2nd Edition, New York: John Wiley & Sons. 1981.

Philips Semiconductors. 1N4148-1N4448 High-speed Diodes Datasheets. 2002.

DC Components. FR101 through FR107 Fast Recovery Rectifiers Datasheets. 2003.

DOI: http://dx.doi.org/10.12928/telkomnika.v10i4.862

Article Metrics

Abstract view : 96 times
PDF - 71 times


  • There are currently no refbacks.

Copyright (c) 2014 Universitas Ahmad Dahlan

TELKOMNIKA Telecommunication, Computing, Electronics and Control
ISSN: 1693-6930, e-ISSN: 2302-9293
Universitas Ahmad Dahlan, 4th Campus, 9th Floor, LPPI Room
Jl. Ringroad Selatan, Kragilan, Tamanan, Banguntapan, Bantul, Yogyakarta, Indonesia 55191
Phone: +62 (274) 563515, 511830, 379418, 371120 ext. 4902, Fax: +62 274 564604

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.