Overdriven Characteristics of Silica Switching Devices

Ary Syahriar, Nabil Rayhan Syahriar, Jusman Syafiie Djamal

Abstract


We have built and characterized silica on silicon switching devices fabricated by using the electron beam irradiation. It is based on Mach-Zehnder structure fabricated on silica on silicon layers where the upper cladding used the MgF2 layers to bury the core. The switching speed of 2.0 s has been achieved. To further increase the switching speed we have used larger voltage to the Ti heating electrode to increase the thermo optics effects on silica structures. The higher driving voltage have been used that falls to zero exactly as the first extinction is reached, therefore three fold increase in modulation speed is achieved.


Keywords


silica on silicon waveguides; switching devices; photonics devices; overdriven switching;

Full Text:

PDF


DOI: http://dx.doi.org/10.12928/telkomnika.v15i4.6457

Article Metrics

Abstract view : 257 times
PDF - 151 times

Refbacks



Copyright (c) 2019 Universitas Ahmad Dahlan

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

TELKOMNIKA Telecommunication, Computing, Electronics and Control
ISSN: 1693-6930, e-ISSN: 2302-9293
Universitas Ahmad Dahlan, 4th Campus, 9th Floor, LPPI Room
Jl. Ringroad Selatan, Kragilan, Tamanan, Banguntapan, Bantul, Yogyakarta, Indonesia 55191
Phone: +62 (274) 563515, 511830, 379418, 371120 ext. 4902, Fax: +62 274 564604

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

View TELKOMNIKA Stats