Research on Electromagnetic Excitation Resonant Sensor Based on Microelectromechanical System

Gang Li, Xiaofeng Zhao, Dianzhong Wen, Yang Yu

Abstract


In this paper, an electromagnetic excitation resonant sensor was designed based on Microelectromechanical system (MEMS) technology. In this new sensor, four nc-Si/c-Si heterojunction p-MOSFETs are manufactured by using the technique of MEMS on the N-type <100> orientation high resistance silicon wafer, and a Wheatstone bridge is composed of four nc-Si/c-Si heterojunction MOSFETs channel resistances, output voltage of the bridge circuit changes according to the applied pressure. A vibration will be generated when an alternating current is applied to the inductance coil of electromagnetic excitation resonant sensor, the maximum power produced in the central part of the four edges of silicon membrane, whose frequency and amplitude are associated with the current in the inductance coil, and the applied pressure P can be detected. Using mechanics and electromagnetism coupling field analysis by Ansys software, the simulation to vibration situation of the silicon membrane of sensor was carried on when vertical magnetic field and alternating current were loaded. Experimental results show that, as the operating voltage is constant, with the increase of current in the inductance coil the conversion of applied pressure increases, and the output voltage of nc-Si/c-Si heterojunction MOSFETs pressure sensor is proportional to the increase of coil magnetic field i.e. the increase of pressure, the experimental results are consistent with the simulation results.

Keywords


Electromagnetic Excitation Resonant Sensor; MEMS; Ansys; nc-Si/c-Si heterojunction MOSFET

Full Text:

PDF

References


Zhao Xiaofeng, Wen Dianzhong, Li Gang. Fabrication and characteristics of the nc-Si/c-Si heterojunction MOSFETs pressure sensor. Sensors. 2012; 12(5): 6369-6379.

Zhao Xiaofeng, Wen Dianzhong, Zhuang Cuicui, et al. Fabrication and Characteristics of the Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors. Journal of Semiconductors. 2013; 34(3):036001(1-6).

Wen Dianzhong. Sensitivity Analysis of Junction Field Effect-Pressure Halltron, Review of Scientific Instrument. 1995; 66 (1): 251-255.

Gradolph, Friedberger, Muller, et al.environments on piezoresistive pressure sensorImpact of high-g and high vibration performance. Sensors and Actuators. A, Physical. 2009; 150(1): 69-77.

Yoon ,J B, Choi Y S, Kim B, et al. CMOS Compatible Surface-Micromachined Suspended-Spiral Inductors for Multi-GHz Silicon RFICs. IEEE Electron Device Letters. 2002; 23(10): 591-593.

Kinnell P K, Craddock R. Advances in silicon resonant pressure transducers. Procedia Chemistry. 2009; 1(1): 104-107.

Jiang Qi-feng Li zheng-fang. Modeling and Analysis of Spiral Inductors for Si-Based RF IC’s. ACTA ELECTRONIC SINICA. 2002; 30(8): 1119-1121.

Mengran Liu, Guojun Zhang, Zeming Jian,et al. Design of Array MEMS Vector Vibration Sensor in the Location of Pipeline Internal Inspector. TELKOMNIKA. 2014; 12(9): 6651- 6657.

Zhang Zhi-yong, Hai Chao-he. High Q-Factor On-chip Spiral Inductors for Bulk Silicon CMOS RF IC’S. Microelectronics. 2003; 33(1): 15-18.

Xiong Jijun, Yang Fang, Liang Ting, et al. Influence of Q-Factor on Signal Transmission Performance of Passive Pressure Sensor. Nanotechnology and Precision Engineering. 2012; 10(5): 429–433.

Achmad Widodo, Latief Rozaqi, Ismoyo Haryanto, et al. Development of Wireless Smart Sensor for Structure and Machine Monitoring. TELKOMNIKA. 2013; 11(2): 417-424.

Peng Guanbin, Liu Jingquan, Wand Longfei, et al. Circuit Design of an Implantable MEMS Pressure Sensor System. Nanotechnology and Precision Engineering. 2013; 11(1): 90–95.

Waugh W H, Gallacher B J, Burdess J S. A High-Sensitivity Resonant Sensor Realized Through the Exploitation of Nonlinear Dynamic Behavior. Mess Sci Technol. 2011; 22(10): 105-202.




DOI: http://dx.doi.org/10.12928/telkomnika.v13i4.1740

Article Metrics

Abstract view : 171 times
PDF - 141 times

Refbacks

  • There are currently no refbacks.


Copyright (c) 2015 Universitas Ahmad Dahlan

TELKOMNIKA Telecommunication, Computing, Electronics and Control
ISSN: 1693-6930, e-ISSN: 2302-9293
Universitas Ahmad Dahlan, 4th Campus, 9th Floor, LPPI Room
Jl. Ringroad Selatan, Kragilan, Tamanan, Banguntapan, Bantul, Yogyakarta, Indonesia 55191
Phone: +62 (274) 563515, 511830, 379418, 371120 ext. 4902, Fax: +62 274 564604

Creative Commons License
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

View TELKOMNIKA Stats