Study and Design of 40 nW CMOS Temperature Sensor for Space Applications
In this paper, a novel CMOS temperature sensors based on sub-threshold MOS operation has been presented, which is designed for space and satellite applications. This proposed CMOS temperature sensor is enunciated good linearity between temperatures range from -55OC to 150OC with inaccuracy of 0.85 OC/V. This circuit is operated at supply 1V and static power consumption 40nW is achieved. The proposed circuit is based on the MOS threshold voltage and mobility. There are two type of sensor output in presented circuit first, voltage proportional to absolute temperature (PTAT) due to threshold voltage and second, negative temperature coefficient (NTC) due to mobility. This circuit is designed & simulated using Cadence analog & digital system design tools UMC90nm CMOS technology. The layout area of the circuit is 17.213μm 6.655μm. This is a low power and longer battery life for harsh environment, wireless sensor network applications etc.
Martinez Brito, Juan Pablo, Aliain Rabacijs. CMOS Smart Temperature sensor for RFID application. 26th Symposium on Integrated Circuits and Systems Design (SBCCI), Curitiba. 2013: 1-6.
Bakker, A. and Huijsing,J. Micropower CMOS temperature sensor with digital output. IEEE Journal Solid State Circuits. 1996; 933-937.
Andre L. Aita, Michiel A.P. Pertijs, et.al. Low Power CMOS Smart Temperature Sensor with a batch-calibrated of inaccuracy of ±0.25O C (±3σ) from 70 O C to 130O C. IEEE Sensors Journal. 2013; 13(5): 1840-1848.
M.A.P. Pertijs, K.A.A.Golam Chowdhury, and A. Hassibi. An On-chip Temperature sensor with a self-Discharging Diode in 32-nm SOI CMOS. IEEE transactions on circuits and systems. 2012; 59(9): 568-572.
M.A.P. Pertijs, K. A. A. Makinwa, and J. H. Huijsing. A CMOS smart temperature sensor with 3σ inaccuracy of ±0.1OC from -55OC to 125 OC. IEEE J. Solid-State Circuits. 2005; 40(12): 2805–2815.